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NTR4501N Power MOSFET
20 V, 3.2 A, Single N-Channel, SOT-23
Features
* * * *
Leading Planar Technology for Low Gate Charge / Fast Switching 2.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint Pb-Free Package is Available
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V(BR)DSS RDS(on) TYP 70 mW @ 4.5 V 85 mW @ 2.5 V ID MAX (Note 1) 3.6 A 3.1 A
Applications
* Load/Power Switch for Portables * Load/Power Switch for Computing * DC-DC Conversion
MAXIMUM RATINGS (TJ= 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C PD IDM TJ, Tstg IS TL Symbol VDSS VGS ID Value 20 12 3.2 2.4 1.25 10.0 -55 to 150 1.6 260 Unit V V A A W
20 V
N-Channel
D
G
S
Steady State tp = 10 ms
3 A C A C SOT-23 CASE 318 STYLE 21 1 2
MARKING DIAGRAM/ PIN ASSIGNMENT
3 Drain
Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
TR1
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
1 Gate TR1 M
2 Source
= Specific Device Code = Date Code
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Symbol RqJA RqJA Max 100 300 Unit C/W
ORDERING INFORMATION
Device NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G Package SOT-23 SOT-23 (Pb-Free) SOT-23 SOT-23 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface-mounted on FR4 board using the minimum recommended pad size.
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2005
1
March, 2005 - Rev. 4
Publication Order Number: NTR4501N/D
M
NTR4501N
Electrical Characteristics (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V VDS = 16 V Gate-to-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature Coefficient Drain-to-Source On Resistance RDS(on) Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Gate Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta tb QRR VGS = 0 V, dIS/dt = 100 A/ms, A/ms IS = 1.6 A VGS = 0 V, ISD = 1.6 A 0.8 7.1 5 1.9 3.0 nC ns 1.2 V td(on) tr td(off) tf VGS = 4.5 V, VDS = 10 V, ID = 3.6 A, RG = 6.0 W 6.5 12 12 3 ns Ciss Coss Crss QG(TOT) QGS QGD VGS = 4.5 V, VDS = 10 V, ID = 3.6 A VGS = 0 V, f = 1.0 MHz, VDS = 10 V 200 80 50 2.4 0.5 0.6 6.0 nC pF gFS VGS(TH) VGS(TH)/TJ VGS = 4.5 V, ID = 3.6 A VGS = 2.5 V, ID = 3.1 A VDS = 5.0 V, ID = 3.6 A VGS = VDS, ID = 250 mA 0.65 -2.3 70 85 9 80 105 mW S 1.2 V mV/C IGSS TJ = 25C TJ = 85C VGS = 0 V, ID = 250 mA 20 24.5 22 1.5 10 100 V mV/C mA mA nA Symbol Test Condition Min Typ Max Units
VDS = 0 V, VGS = 12 V
3. Pulse Test: Pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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NTR4501N
7.0 ID, DRAIN CURRENT (AMPS) 6.0 5.0 4.0 . 3.0 2.0 1.0 0 0 1 2 3 4 5 VGS = 1.4 V VGS = 1.2 V 0 6 7 8 9 10 0 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) VGS = 1.6 V ID, DRAIN CURRENT (AMPS) VGS = 10 V VGS = 2.2 V VGS = 3.0 V VGS = 2.0 V T = 25C J 7.0 6.0 5.0 4.0 3.0 2.0 TJ = 55C 1.0 TJ = 25C TJ = 100C VDS 10 V
VGS = 1.8 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.25
0.10 TJ = 25C 0.09 VGS = 2.5 V
0.20
0.08 VGS = 4.5 V
0.15
ID = 3.2 A TJ = 25C
0.07
0.10
0.06
0.05 1.0
2.0
3.0
4.0
5.0
6.0
0.05 0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance versus Gate-to-Source Voltage
1.4 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1000
Figure 4. On-Resistance versus Drain Current and Gate Voltage
VGS = 0 V 1.2 ID = 3.2 A VGS = 4.5 V
IDSS, LEAKAGE (nA)
100
TJ = 150C
1.0
10 TJ = 100C
0.8
0.6 -50
1.0 -25 0 25 50 75 100 125 150 2 6 10 14 18 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current versus Voltage
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NTR4501N
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 350 300 C, CAPACITANCE (pF) 250 200 150 100 50 Crss 0 0 3 5 8 10 13 15 18 20 DRAIN-TO-SOURCE VOLTAGE (VOLTS) Coss Ciss VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5.0 QT VDS VGS 9
15
4.0
12
3.0
2.0
QGS
QGD
6
1.0 TJ = 25C ID = 3.2 A 0 0.5 1.0 1.5 2.0 2.5
3
0
0 3.0
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
100 IS, SOURCE CURRENT (AMPS) VDS = 10 V ID = 3.2 A VGS = 4.5 V t, TIME (ns) 10 td(on) tf 1
4 VGS = 0 V TJ = 25C 3
td(off) tr
2
1
0 1 10 RG, GATE RESISTANCE (W) 100
0 0.3 0.6 0.9 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation versus Gate Resistance
Figure 10. Diode Forward Voltage versus Current
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NTR4501N
PACKAGE DIMENSIONS
SOT-23 (TO-236) CASE 318-08 ISSUE AK
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60
A L
3 1 2
BS
V
G C D H K J
DIM A B C D G H J K L S V
STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN
SOLDERING FOOTPRINT*
0.95 0.037
0.95 0.037
2.0 0.079 0.9 0.035 0.8 0.031
SCALE 10:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4501N
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NTR4501N/D

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